electrical characteristics (t =25 unless otherwise specified) pad areas murs4 0 item symbol unit test conditions repetitive peak reverse voltage v rrm v 50 100 150 200 300 400 500 600 average forward current i f(av) a 60hz half-sine wave, resistance load, t l =100 4.0 surge(non-repetitive)forward current i fsm a 60hz half-sine wave ,1 cycle , ta =25 125 junction temperature t j -55~+150 storage temperature t stg -55 ~ +150 item symbol unit test condition peak forward voltage v f v i f =4.0a maximum reverse recovery time t rr ns i f =0.5a,i r =1.0a,i rr =0.25a 35 i rrm1 t a =25 10 peak reverse current i rrm2 a v rm =v rrm t a =100 100 r j-a between junction and ambient 20 1) thermal resistance(typical) r j-l /w between junction and terminal 12 1) notes: thermal resistance from junction to ambient and from junction to lead mounted on p.c.b. with 0.3" x 0.3" (8.0 mm x 8.0 mm) copp er v max i mum r m s v rms vo ltage 35 70 140 280 420 105 210 350 super fast recovery rectifier diode smc plastic-encapsulate diodes smc features i o 4a vrrm 50v-600v high surge current capability applications rectifier : from 05 to 60 xx marking polarity: color band denotes cathode glass passivated chip murs4xx 1 h igh diode semiconductor murs4 0 5 thru murs4 6 0 0 5 1 0 1 5 20 30 4 0 50 6 0 0 5 1 0 1 5 20 30 4 0 50 6 0 0.89 1.28 murs4 0
typical characteristics 2 h igh diode semiconductor 4.0 3.2 2.4 1.6 0.8 0 0 25 50 75 100 125 150 175 125 100 75 50 25 0 number of cycles at 60 hz fig. 2-maximum non-repetitive peak forward surge current fig. 1- forward current derating curve average forward rectified amperes peak forward surge current amperes single phase half wave 60hz resistive or inductive load 1 10 100 0 20 40 60 80 100 1,000 100 10 1 0.1 0.01 tj=100 c tj=25 c percentage of peak reverse voltage,% fig. 4-typical reverse characteristics instantaneous reverse current microamperes 8.3ms single half sine-wave lead temperature, c current, fig. 3-typical instantaneous forward characteristics instantaneous forward current,amperes instantaneous forward voltage, volts 0 0.4 0.8 1.2 1.6 1.8 0.1 1 20 10 t j =25 c pulse width=300 m s 2%duty cycle murs405-murs420 murs430 - murs460
0.108 (2.75) 0.123 (3.25) 0.256(6.50) 0.280(7.10) 0.217(5.50) 0.240(6.10) 0.087(2.2) 0.106(2.7) 0.035(0.90) 0.055(1.40) 0.291(7.40) 0.331(8.40) 0.012(0.30) 0.007(0.17) 0.008(0.203)max. dimensions in inches and (millimeters) package outline dimensions smc 3 suggested pad layout smc 6.5 3.5 1.8 jshd jshd h igh diode semiconductor
4 reel taping specifications for surface mount devices-smc h igh diode semiconductor
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